t4 - lds - 0064 , rev . 3 (12 1467 ) ?201 2 microsemi corporation page 1 of 9 2n6782, 2n6784 and 2n6786 available on commercial versions n- channel mosfet qualified per mil - prf - 19500/55 6 qualified levels : jan, jantx , and jantxv description this family of 2n6782 , 2n6784 and 2n678 6 switching transistors are military qualified up to the jan txv level for high - reliability applications . these devices are also available in a low profile u - 18 lcc surface mount package . microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through - hole and surface - mount packages. to - 205af ( to - 39 ) package also available in : u- 18 lcc package ( surface mount ) 2n6782 u & 2n 6 78 6u important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n 67 82 , 2n6784 and 2n 6 78 6 number series. ? jan, jantx, and jantxv qualifications are available per mil - prf - 19500/ 55 6. (see part nomenclature for all available options.) ? rohs compliant versions available (commercial grade only). applications / benefits ? lightweight top - hat design with flexible terminals offers a variety of mounting flexibility . ? military and other high - reliability applications. maximum ratings @ t a = +25 oc unless otherwise stated msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters / test conditions symbol value unit operating & storage junction temperature range t j & t stg - 55 to +150 c thermal resistance junction - to - case r ? jc 8.33 o c/w total power dissipation @ t a = +25 c @ t c = + 25 c (1) p t 0.8 15 w drain - source voltage, dc 2n6782 2n6784 2n678 6 v ds 100 200 400 v gate - source voltage, dc v gs 20 v drain current, dc @ t c = +25 oc (2) 2n6782 2n6784 2n678 6 i d1 3.5 0 2 .25 1.25 a drain current, dc @ t c = +100 oc (2) 2n6782 2n6784 2n678 6 i d2 2.25 1.50 0.80 a off - state current (peak total value) (3) 2n6782 2n6784 2n678 6 i dm 14.0 9.0 5.5 a (pk) source current 2n6782 2n6784 2n678 6 i s 3.5 0 2.25 1.25 a see notes on next p age. downloaded from: http:///
t4 - lds - 0064 , rev . 3 (12 1467 ) ?201 2 microsemi corporation page 2 of 9 2n6782, 2n6784 and 2n6786 notes: 1. derate linearly 0. 1 2 w/c for t c > +25 c . 2. the following formula derives the maximum theoretical i d limit. i d is also limited by package and internal wires and may be limited due to pin diameter. 3 . i dm = 4 x i d1 as calculated in note 1. mechanical and packaging ? case: hermetically sealed, k ovar base, n ickel cap. ? term inals: tin/ l ead solder dip nickel plate or rohs compliant pure tin plate (commercial grade only). ? marking: part number, d ate c ode, m anufacturer s id. ? weight: approximately 1.064 grams. ? see p ackage d imensions on last page. part nomenclature jan 2n67 82 (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = commercial jedec type number (see electrical characteristic s table) rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant symbols & definitions symbol definition di/ dt rate of c hange of d iode c urrent while in reverse - recovery mode, recorded as maximum value. i f forward c urrent r g gate d rive i mpedance v dd drain s upply v oltage v ds drain s ource v oltage, dc v gs gate s ource v oltage, dc downloaded from: http:///
t4 - lds - 0064 , rev . 3 (12 1467 ) ?201 2 microsemi corporation page 3 of 9 2n6782, 2n6784 and 2n6786 electrical characteristics @ t a = +25 c, unless otherwise noted parameters / test conditions symbol min. max. unit off character istics drain - source breakdown voltage v gs = 0 v, i d = 1 .0 ma 2n6782 2n6784 2n6786 v (br)dss 100 200 400 v gate - source voltage (threshold) v ds v gs , i d = 0.25 ma v ds v gs , i d = 0.25 ma, t j = +125 c v ds v gs , i d = 0.25 ma, t j = - 55 c v gs(th)1 v gs(th)2 v gs(th)3 2.0 1.0 4.0 5.0 v gate current v gs = 20 v, v ds = 0 v v gs = 20 v, v ds = 0 v, t j = +125 c i gss1 i gss2 100 200 na dra in current v gs = 0 v, v ds = 80 v v gs = 0 v, v ds = 16 0 v v gs = 0 v, v ds = 320 v 2n6782 2n6784 2n6786 i dss1 25 a drain current v gs = 0 v, v ds = 80 v, t j = +125 c v gs = 0 v, v ds = 16 0 v, t j = +125 c v gs = 0 v, v ds = 32 0 v, t j = +125 c 2n6782 2n6784 2n6786 i dss2 0.25 ma static drain - source on - state resistance v gs = 10 v, i d = 2.25 a pulsed v gs = 10 v, i d = 1.50 a pulsed v gs = 10 v, i d = 0.80 a pulsed 2n6782 2n6784 2n6786 r ds(on)1 0.60 1.50 3.60 ? static drain - source on - state res istance v gs = 10 v, i d = 3.50 a pulsed v gs = 10 v, i d = 2.25 a pulsed v gs = 10 v, i d = 1.25 a pulsed 2n6782 2n6784 2n6786 r ds(on)2 0.61 1.60 3.70 ? static drain - source on - state resistance t j = +125 c v gs = 10 v, i d = 2.25 a pulsed v gs = 10 v, i d = 1 .5 0 a pulsed v gs = 10 v, i d = 0.80 a pulsed 2n6782 2n6784 2n6786 r ds(on)3 1.08 2.81 7.92 ? diode forward voltage v gs = 0 v, i d = 3.50 a pulsed v gs = 0 v, i d = 2.25 a pulsed v gs = 0 v, i d = 1. 25 a pulsed 2n6782 2n6784 2n6786 v sd 1.5 1.5 1.4 v downloaded from: http:///
t4 - lds - 0064 , rev . 3 (12 1467 ) ?201 2 microsemi corporation page 4 of 9 2n6782, 2n6784 and 2n6786 electrical characteristics @ t a = +25 c, unless otherwise noted (continued) dynamic characteristics parameters / test conditions symbol min. max. unit gate charge: on - state gate charge v gs = 10 v, i d = 3.50 a , v ds = 50 v v gs = 10 v, i d = 2.25 a , v ds = 10 0 v v gs = 10 v, i d = 1.25 a , v ds = 20 0 v 2n6782 2n6784 2n6786 q g(on) 8.1 8.6 12 nc gate to source charge v gs = 10 v, i d = 3.50 a , v ds = 50 v v gs = 10 v, i d = 2.25 a , v ds = 10 0 v v gs = 10 v, i d = 1.25 a , v ds = 20 0 v 2n6782 2n6784 2n6786 q gs 1.7 1.5 1.8 nc gate to drain charge v gs = 10 v, i d = 3.50 a , v ds = 50 v v gs = 10 v, i d = 2.25 a , v ds = 10 0 v v gs = 10 v, i d = 1.25 a , v ds = 20 0 v 2n6782 2n6784 2n6786 q gd 4.5 5.5 7.6 nc switching characteristics param eters / test conditions symbol min. max. unit turn - on delay time i d = 3.50 a, v gs = 10 v, r g = 7.5 ? , v dd = 50 v i d = 2.25 a, v gs = 10 v, r g = 7.5 ? , v dd = 100 v i d = 1. 25 a, v gs = 10 v, r g = 7.5 ? , v dd = 200 v 2n6782 2n6784 2n6786 t d(on) 15 ns rinse time i d = 3.50 a, v gs = 10 v, r g = 7.5 ? , v dd = 50 v i d = 2.25 a, v gs = 10 v, r g = 7.5 ? , v dd = 100 v i d = 1. 25 a, v gs = 10 v, r g = 7.5 ? , v dd = 200 v 2n6782 2n6784 2n6786 t r 25 20 20 ns turn - off delay time i d = 3.50 a, v gs = 10 v, r g = 7.5 ? , v dd = 50 v i d = 2.25 a, v gs = 10 v, r g = 7.5 ? , v dd = 100 v i d = 1. 25 a, v gs = 10 v, r g = 7.5 ? , v dd = 200 v 2n6782 2n6784 2n6786 t d(off) 25 30 35 ns fall time i d = 3.50 a, v gs = 10 v, r g = 7.5 ? , v dd = 50 v i d = 2.25 a, v gs = 10 v, r g = 7.5 ? , v dd = 100 v i d = 1. 25 a, v gs = 10 v, r g = 7.5 ? , v dd = 200 v 2n6782 2n6784 2n6786 t f 20 20 30 ns diode reverse recovery time di/dt 100 a/s, v dd 50 v, i f = 3.50 a di/dt 100 a/s, v dd 50 v, i f = 2.2 5 a di/dt 100 a/s, v dd 50 v, i f = 1. 25 a 2n6782 2n6784 2n6786 t rr 180 350 540 ns downloaded from: http:///
t4 - lds - 0064 , rev . 3 (12 1467 ) ?201 2 microsemi corporation page 5 of 9 2n6782, 2n6784 and 2n6786 graphs t 1 , rectangle pulse duration (sec ond s) figure 1 thermal response curves thermal response (z jc ) downloaded from: http:///
t4 - lds - 0064 , rev . 3 (12 1467 ) ?201 2 microsemi corporation page 6 of 9 2n6782, 2n6784 and 2n6786 graphs (continued) figure 2 C maximum d rain c urrent vs c ase t emperature g raphs t c case temperature (oc) t c case temperature (oc) for 2n6782 for 2n6784 t c case temperature (oc) for 2n6786 i d, drain current (amperes) i d, drain current (amperes) i d, drain current (amperes) downloaded from: http:///
t4 - lds - 0064 , rev . 3 (12 1467 ) ?201 2 microsemi corporation page 7 of 9 2n6782, 2n6784 and 2n6786 graphs (continued) figure 3 C maximum s afe o perating a rea v ds , drain - to - source voltage (volts) 2n6782 v ds , drain - to - source voltage (volts) 2n6784 i d drain curre nt (amperes) i d drain current (amperes) downloaded from: http:///
t4 - lds - 0064 , rev . 3 (12 1467 ) ?201 2 microsemi corporation page 8 of 9 2n6782, 2n6784 and 2n6786 graphs (continued) figure 3 C maximum s afe o perating a rea v ds , drain - to - source voltage (volts) 2n6786 i d drain current (amperes) downloaded from: http:///
t4 - lds - 0064 , rev . 3 (12 1467 ) ?201 2 microsemi corporation page 9 of 9 2n6782, 2n6784 and 2n6786 package dimensions notes: 1. dimensions are in inches. millimeters are given for general information only. 2. beyond radius (r) maximum, j shall be held for a minimum length of .011 (0.028 mm). 3. dimension tl measured from maximum hd. 4. outline in this zone is not control led. 5. dimension cd shall not vary more than .010 (0.25 mm) in zone p. this zone is controlled for automatic handling. 6. leads at gauge plane .054 +.001, - .000 (1.37 +0.03, - 0.00 mm) below seating plane shall be within .007 (0.18 mm) radius of true p osition (tp) at maximum material condition (mmc) relative to tab at mmc. 7. lu applies between l1 and l2. ld applies between l2 and l minimum. diameter is uncontrolled in l1 and beyond ll minimum. 8. all three leads. 9. radius (r) applies to both inside corners of tab. 10. drain is electrically connected to the case. 11. in accordance with asme y14.5m, diameters are equivalent to x symbology. dimensions symbol inch millimeters note min max min max cd 0.305 0.335 7.75 8.51 ch 0.16 0 0 .180 4.0 6 4.57 hd 0.335 0.370 8.51 9.40 lc 0.200 tp 5.08 tp 6 ld 0.016 0.021 0.41 0.53 7 , 8 ll 0.500 0.750 12.70 19.05 7, 8 lu 0.016 0.019 0.41 0.48 7, 8 l1 0.050 1.27 7, 8 l2 0.250 6.35 7, 8 p . 10 0 2.54 5 q 0.050 1.27 4 t l 0.029 0.045 0.74 1.14 3 tw 0.028 0.034 0.7 2 0.86 2 r 0.010 0.25 9 45 tp 45 tp 6 downloaded from: http:///
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